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dc.contributor.advisorYoussef, Mohamed
dc.contributor.authorAttia, Yosra
dc.date.accessioned2017-03-17T19:56:01Z
dc.date.accessioned2022-03-29T16:48:50Z
dc.date.available2017-03-17T19:56:01Z
dc.date.available2022-03-29T16:48:50Z
dc.date.issued2016-10-01
dc.identifier.urihttps://hdl.handle.net/10155/727
dc.description.abstractLow losses fast switching wide band gap (WBG) semiconductors, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are becoming viable candidates for DC/DC converters switches in the powertrain of electric vehicle (EV). Thanks to the technology advancements, WBG power transistors are available now in the market with competing loss levels. In this research, the need for such devices to boost the system efficiency for extended vehicle mileage is justified. Case studies comparing the performance of the available options are presented, for the first time. The performance, motoring and regenerative braking, is studied at different junction temperatures. The results reported higher power density and increased car mileage using WBG semiconductors. These findings were consistent in automotive Nissan Leaf electric vehicle (NLEV) case and a Bombardier metro rail car, to provide the authentication of the developed plug-and-play model. Simulation and Experimental results were given to highlight the merits of the work.en
dc.description.sponsorshipUniversity of Ontario Institute of Technologyen
dc.language.isoenen
dc.subjectElectric vehiclesen
dc.subjectWBG semiconductorsen
dc.subjectGaN on Si cascodeen
dc.subjectSiC ACCUFETen
dc.subjectHybrid moduleen
dc.titlePerformance of wide band gap switching devices in DC/DC converters of electric vehiclesen
dc.typeThesisen
dc.degree.levelMaster of Applied Science (MASc)en
dc.degree.disciplineElectrical and Computer Engineeringen


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